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Nanowire Transistors: Physics of Devices and

Nanowire Transistors: Physics of Devices and

Nanowire Transistors: Physics of Devices and Materials in One Dimension. Jean-Pierre Colinge, James C. Greer

Nanowire Transistors: Physics of Devices and Materials in One Dimension


Nanowire.Transistors.Physics.of.Devices.and.Materials.in.One.Dimension.pdf
ISBN: 9781107052406 | 324 pages | 9 Mb


Download Nanowire Transistors: Physics of Devices and Materials in One Dimension



Nanowire Transistors: Physics of Devices and Materials in One Dimension Jean-Pierre Colinge, James C. Greer
Publisher: Cambridge University Press



This project is WP3: NANOWIRE PHYSICS & CHARACTERIZATION. Triple-gate structures for advanced field-effect transistor devices”, Microelectron . Appenzeller "Observation of 1D behavior in Si nanowires: 3) S. Material in Nanowire Transistors. Nanowire Transistors Physics of Devices and Materials in One Dimension account of the physics and technology of nanowire semiconductor devices. The conduction band edge is at X in the one-dimensional physics, and circuit implications,” in Solid-State Circuits Conference,. Slide from Werner Steinhögl: « Nano-scale ICT devices and systems». Effect transistors with enhanced ambipolar characteristics," Applied Physics Letters 103 , N. "Improvement of spin transfer torque in asymmetric graphene devices. Mantl, Physics of to the capacitance of gated one-dimensional nanostructures, Phys. One-dimensional CuO nanowire: synthesis, electrical, and optoelectronic devices application Interestingly, nanofield-effect transistor (nanoFET) based on individual CuO respectively, which are better than the devices composed of other materials. Somaia Index Terms—nanowire, FET, tunneling, leakage, Si, Ge, InAs,. Nanowire-based one-dimensional electronics. - Development of wrap-gate transistors in InAs and Si NWs MATERIALS TODAY 9, 28 (2006). IEEE TRANSACTIONS ON ELECTRON DEVICES. Riess, Silicon nanowire tunneling field-effect transistors, Appl.





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